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SAN JOSE, Calif. &#151 Advanced Analogic Technologies Inc., a developer of power management semiconductors, has entered into a definitive agreement to acquire the power management analog business of China's IPCore Technologies Corp.


The acquisition includes IPCore's subsidiary, Analog Power Semiconductor Corp. (AP Semi), and certain related assets. Under the terms, AnalogicTech (Sunnyvale, Calif.) will purchase AP Semi and certain related assets from IPCore (Shanghai) for approximately $22 million in cash, in addition to certain transaction related expenses.

The acquired business has 52 employees, including approximately 32 engineers. Subject to customary closing conditions, the acquisition is expected to close in early October 2006 and to be neutral to earnings in the second half of 2007.

The acquisition of AP Semi will allow us to immediately expand our engineering team and establish a fully-staffed Shanghai design center,” said Richard Williams, president, CEO and CTO of AnalogicTech, in a statement.


This move complements our ongoing product design and development activities targeted at portable consumer electronic devices, such as digital still cameras, personal media players, and mobile phones,” he said.


Also based on what it claims to be the first implementation of high-k dielectric films for NAND, Samsung said the 32-Gbit NAND flash can be used in memory cards with densities of up to 64 gigabytes (GB). One 64-GB memory card is able to store over 64 hours of DVD resolution movies (about 40 movies) or 16,000 MP3 music files (1,340 hours), according to South Korea's Samsung, based here. .

Samsung claimed the development of the 40 nm-based NAND memory device uses CTF technology, which eliminates the need of the floating gate. Instead, the data is temporarily placed in a holding chamber” of the non-conductive layer of the flash memory composed of silicon nitride, resulting in a higher level of reliability and better control of the storage current, Samsung said.

In each 32-Gb memory device, the height of the control gate in the CTF is only 20 percent of that of the control gate for a device with a typical floating gate structure, the company said.

The CTF-based NAND flash reduces inter-cell noise levels to a large extent and processing steps by 20 percent compared with those of the floating gate structure. Its single-gate structure also enables high scalability which will eventually improve manufacturing process technology for delivery of a 256-Gbit flash memory based on 20-nm design rules, according to Samsung.

We have overcome the limit that the floating gate structure was faced with over the past 35 years,” Hwang Chang-Gyu, President and CEO of Samsung's Semiconductor Business, told an unprecedented press conference here, referring to the floating gate technology introduced by Intel to the world in 1971.

Allegro Microsystems , 1-508-853-5000, www.allegromicro.com

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