Amphenol SGX Sensortech

<p>That was the conclusion of a panel of senior executives from laser component makers at Photonics West here.</p>

At up to 50 percent lower power and 20 percent lower cost than previous generations, the new Virtex-6 FPGA Family is claimed to deliver the right mix of flexibility, hard intellectual property (IP) cores, transceiver capabilities, and development tool support to enable Xilinx customers to meet the demands of markets with evolving standards and stringent performance requirements in the pursuit of higher bandwidth.

Kyocera Fineceramics GmbHDaniela FaustHead of Corporate CommunicationsHammfelddamm 641460 NeussFon: +49 2131/16 37 188Fax: +49 2131/16 37 150Mobile: +49 175/7275706

About Kyocera Headquartered in Kyoto, Japan, the Kyocera Corporation is one of the world's leading manufacturers of fine ceramic components for the technology industry. The strategically important divisions in the Kyocera Group, which comprises 189 subsidiaries, are information and communications technologies, products to increase the quality of life, and environmentally friendly products. The technology group is also one of the largest producers of solar energy systems worldwide.


With a workforce of 66,496 employees, Kyocera posted net sales of approximately €8.16 billion in fiscal year 2008. The products marketed by the company in Europe include laser printers, digital copying systems, microelectronic components, fineceramic products and complete solar systems. The corporation has two independent companies in the Federal Republic of Germany: the Kyocera Mita Deutschland GmbH in Meerbusch and the Kyocera Fineceramics GmbH in Neuss and Esslingen.

Note: The above text is the public part of the press release obtained from the manufacturer (with minor modifications). EETimes Europe cannot be held responsible for the claims and statements made by the manufacturer. The text is intended as a supplement to the new product presentations in EETimes Europe magazine.


LONDON — ARM Holdings plc (Cambridge, England), a licensor of processor-related intellectual property, is looking to cut about 3 percent of its workforce and has imposed a pay freeze from Jan. 1, 2009, company executives told financial analysts Tuesday (Feb. 3).

Tim Score, chief financial officer, said that a program of job cuts had been started in the fourth quarter of 2008 and would continue in Q1 2009, giving rise to some charges that had appeared in the financial results. Speaking at an analysts' meeting convened to discuss ARM's Q4 and full year results for 2008, Score said the job cuts explained a charge of £300,000 (about $430,000) in Q4 and would give rise to a charge of £1.2 million (about $1.7 million) in the first quarter of 2009.


Warren East, CEO of ARM, said the latest cuts were not cost-driven but were about a drive for efficiency. There's no one location or business unit or function [that has been targeted]. The cuts are across the piece,” he said. A number of people have been made redundant. But a number of people have been moved to take up other positions,” he added.

Over the last two years ARM has embarked on restructuring programs in both its Physical Intellectual Property Division and in its development systems business (see ARM job cutting moves to the tools group from May 5, 2008).

Use of copper interconnect in DRAM is expected to accelerate into the 50-nm class process node with the addition of Samsung and Elpida (which announced its 50-nm DRAM with copper interconnect late 2008), as well as Micron, which has been using copper interconnect technology for several generations.

Another new technology being introduced to DRAM is 3D (three dimensional) DDR3, using TSV (through-silicon via) technology. Samsung is expected to present their latest innovations in 8-Gbit 3D DDR3 with TSV at ISSCC 2009.

This is a clear sign that DRAM manufacturers are constantly making improvements to their process technology, maintaining their competitive edge against their competitors. As the process node reaches the 50-nm and 40-nm class, there are some early signs of technical challenges. Uniform scaling in both the wordline and bitline direction from previous 80-nm and 60-nm process generations appears to be changing. Scaling in one direction is more challenging than in the other direction. Clear definition of 2F x 4F (8F2 cell) or 2F x 3F (6F2 cell) for DRAM cell dimension gets a little tricky in some cases. We also see that access-transistor design becomes more challenging due to the reduced size of the transistor and increased need for leakage control through better isolation.

The DRAM industry has many different choices to make: different cell designs; 6F2 vs. 8F2 and 6F2 vs. 4F2 , the selection of interconnection material; aluminum vs. copper and the number of metal layers to used (three vs. four).

Some recent trends that reduce the number of interconnect layers show the emphasis on cost-reduction efforts in the DRAM industry. These different choices will pose challenges to some manufacturers with less favorable technologies. Competition between manufacturers with different technologies and approaches will become more evident–manufacturers will be required to develop competing technology or to come up with innovative alternative solutions to overcome the challenges. All aspects of these changes are important for the DRAM industry to remain a viable business.


ARM acquires Norwegian graphics company

Copyright © 苏ICP备11090050号-1 tl431 datasheet All Rights Reserved. 版权投诉及建议邮箱