Honeywell Aerospace

<p>Ninth Place : Yale Fan, 18, of Beaverton, Ore., received a $20,000 award for his research that demonstrated the advantages of quantum computing in performing difficult computations.</p>

For new users, Warp 6.0 is available via download from Cypress. Warp 6.0, Professional and Enterprise will be out on CD-ROM next month.

I am an 'optical forever' guy. I am a big proponent of doing more [research] on line-edge roughness. I think longer-term research on subassembly is something we should be doing. It was very premature to give up on some of the high-index materials development. If we have stayed the course, I think those high-index materials would have been there to extend double patterning another generation.”

HW-04-09-L-S-450-SM_Datasheet PDF

If you remember, there have been quite a number of alternatives in lithography. One of them was X-ray, a large program that was supposed to extend lithographic capability beyond optical lithography. But optical lithography never fell off the cliff. And that's the case today. However, I think we're seeing the cliff a little bit closer now, and that's what mobilizes all of these additional resources to finally come up with a practical alternative or solution.

There are sure no winners right now. That's the reason why many different technologies are being pursued. The top priority is still to further work on 193 nm and extend that to the absolute. This provides some time for EUV, which is the next major contender.

But are we headed in the wrong direction? There are many different directions being pursued, but none has really so far exceeded EUV. Most large semiconductor companies are pretty much counting on EUV to be there.

HW-04-09-L-S-450-SM_Datasheet PDF

EUV always looked like the impossible dream. But there are tremendous resources behind it. Is EUV late? Yes. Everyone understands that lateness is not only inconvenient, but it's also expensive.

Maskless lithography is struggling to regain a certain level of interest in the industry. E-beam had a very successful period and then basically went under. It did not keep up with Moore's Law.”

HW-04-09-L-S-450-SM_Datasheet PDF

I think we're going in the right direction because there are not many alternatives at this moment; [we] either stop scaling or continue to push EUV.

SAN FRANCISCO — So you thought only 157-nm F2 optical, or extreme UV, or even electron-beam projection (EPL) technologies were the most likely lithography candidates for the 0.07-micron (70-nm) process node? Well, guess again.

However, Charles Sparkes, associate director of technology for Nikon Precision Inc. in Belmont, Calif., told last week's Semicon West technical symposium that 193-nm argon fluoride tools with hard phase shift masks and numerical aperture lens of 0.7 could be expected to reach 80-nm processing. Like other vendors, Japan's Nikon is covering its bets at very low resolutions.

During the session in San Francisco, Sparkes said the firm is also developing 157-nm for the 70-nm node, but alternating phase shift masks might extend this tool into the 50-nm node, where Nikon is also working on EUV and EPL systems for that generation of lithography.

Canon Inc.'s Semiconductor Equipment division is also working on all those advanced lithography systems for the sub-100-nm nodes. But Akiyoshi Suzuki, general manager of Canon Research Center, said the Japanese vendor is also developing two other lithography concepts — multiple e-beam direct write (MEBDW) and also a point source proximity X-ray lithography tool.


The ADP3050 is priced at $1.78 each in 1,000-piece quantities.

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